PART |
Description |
Maker |
CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM1200HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM400DY-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM800E2C-66H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
AP20GT60I AP20GT60I14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Speed Switching
|
Advanced Power Electronics Corp.
|
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
NTE3311 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|